High‐temperature Raman spectroscopy of microstructure around the growing β‐BaB2O4 crystal in the BaO–B2O3–Na2O system. (1st April 2014)

• Record Type: Journal Article
• Authors: Liu, Shanshan; Zhang, Guochun; Wan, Songming; Jiang, Xingxing; Wang, Yuanyuan; Lin, Zheshuai; Wu, Yicheng
• Is Part Of: Journal of applied crystallography. Volume 47:Part 2(2014:Apr.)
• Page Start: 739
• Page End: 744
• Publication Date: 2014-04-01
• Subjects: Crystallography -- Periodicals; 548.05
• DOI: 10.1107/S160057671400377X
• Languages: English
• ISSNs: 0021-8898

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>High‐temperature Raman spectroscopy has been applied to study <italic>in situ</italic> the microstructure of the solution near the β‐BaB₂O₄ crystal–solution interface in the BaO–B₂O₃–Na₂O growth system. A boundary layer near the crystal–solution interface was observed. In accordance with the high‐temperature Raman spectroscopy and first principles calculations, a boron–oxygen structural model is proposed to explain the microstructure of the solution and growth habit. The results show that the growth solution contains a special group, [BO₂ØBOØB=O]³⁻ (Ø = bridging oxygen), which transformed to the growth unit [B₃O₆]³⁻ near the interface.</p> </abstract>