Field‐Effect Transistors: All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors (Adv. Mater. 37/2014). (October 2014)

• Record Type: Journal Article
• Authors: Muhieddine, Khalid; Ullah, Mujeeb; Pal, Bhola N.; Burn, Paul; Namdas, Ebinazar B.
• Is Part Of: Advanced materials. Volume 26:Number 37(2014)
• Page Start: 6409
• Page End: 6409
• Publication Date: 2014-10
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201470255
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201470255-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>M. Ullah, E. B. Namdas, and co‐workers present on page 6410 the first all‐solution‐processed hybrid light‐emitting transistors, and demonstrate the effectiveness of their operation with three organic emissive materials. This approach involves the fabrication of a bilayer device structure using a solution of organic emissive material, and a sol–gel of zinc tin oxide. The use of nonplanar contacts is also demonstrated in this study as playing a crucial role in the enhanced optoelectronics characteristics. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1fbrb9jw" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>