Integration of Self‐Assembled Epitaxial BiFeO3–CoFe2O4 Multiferroic Nanocomposites on Silicon Substrates. (24th July 2014)

• Record Type: Journal Article
• Authors: Kim, Dong Hun; Aimon, Nicolas M.; Sun, Xue Yin; Kornblum, Lior; Walker, Fred. J.; Ahn, Charles. H.; Ross, Caroline A.
• Is Part Of: Advanced functional materials. Volume 24:Number 37(2014)
• Page Start: 5889
• Page End: 5896
• Publication Date: 2014-07-24
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201401458
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Perovskite‐spinel epitaxial nanocomposite thin films are commonly grown on single crystal perovskite substrates, but integration onto a Si substrate can greatly increase their usefulness in devices. Epitaxial BiFeO₃–CoFe₂O₄ nanocomposites consisting of CoFe₂O₄ pillars in a BiFeO₃ matrix are grown on (001) Si with two types of buffer layers: molecular beam epitaxy (MBE)‐grown SrTiO₃‐coated Si and pulsed‐laser‐deposited (PLD) Sr(Ti_0.65Fe_0.35)O₃/CeO₂/yttria‐stabilized ZrO₂/Si. The nanocomposite grows with the same crystallographic orientation and morphology as that observed on single crystal SrTiO₃ when the buffered Si substrates are smooth, but roughness of the Sr(Ti_0.65Fe_0.35)O₃ promoted additional CoFe₂O₄ pillar orientations with 45° rotation. The nanocomposites on MBE‐buffered Si show very high magnetic anisotropy resulting from magnetoelastic effects, whereas the hysteresis of nanocomposites on PLD‐buffered Si can be understood as a combination of the hysteresis of the Sr(Ti_0.65Fe_0.35)O₃ film and the CoFe₂O₄ pillars.</p> </abstract>