All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors. (5th June 2014)

• Record Type: Journal Article
• Authors: Muhieddine, Khalid; Ullah, Mujeeb; Pal, Bhola N.; Burn, Paul; Namdas, Ebinazar B.
• Is Part Of: Advanced materials. Volume 26:Number 37(2014)
• Page Start: 6410
• Page End: 6415
• Publication Date: 2014-06-05
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201400938
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201400938-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>All solution‐processed, high performance hybrid light emitting transistors (HLETs)</bold> are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1fbrbb6w" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>