Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density. (28th July 2014)

• Record Type: Journal Article
• Authors: Lee, Shinbuhm; Sangle, Abhijeet; Lu, Ping; Chen, Aiping; Zhang, Wenrui; Lee, Jae Sung; Wang, Haiyan; Jia, Quanxi; MacManus‐Driscoll, Judith L.
• Is Part Of: Advanced materials. Volume 26:Number 36(2014)
• Page Start: 6284
• Page End: 6289
• Publication Date: 2014-07-28
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201401917
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201401917-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A novel device structure</bold> is developed, which uses easy‐to‐grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high‐concentration oxygen vacancy. Non‐linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1f8bctm1" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>