Epitaxial Growth of PbSe Quantum Dots on MoS2 Nanosheets and their Near‐Infrared Photoresponse. (14th July 2014)

• Record Type: Journal Article
• Authors: Schornbaum, Julia; Winter, Benjamin; Schießl, Stefan P.; Gannott, Florentina; Katsukis, Georgios; Guldi, Dirk M.; Spiecker, Erdmann; Zaumseil, Jana
• Is Part Of: Advanced functional materials. Volume 24:Number 37(2014)
• Page Start: 5798
• Page End: 5806
• Publication Date: 2014-07-14
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201400330
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>A facile one‐pot synthesis of hybrid materials consisting of PbSe quantum dots (QDs) that grow epitaxially on MoS₂ nanoflakes resulting in three equivalent orientation variants of the PbSe QDs with respect to the MoS₂ lattice is demonstrated. The epitaxial growth and cross‐sectional high‐resolution transmission electron microscopy (HRTEM) investigations verify a direct and linker‐free contact between the quantum dots and the transition metal dichalcogenide (TMD) nanoflakes, while maintaining surface passivation of the PbSe with oleic acid ligands on the outside. Solution‐processed photodetectors based on PbSe‐MoS₂ hybrids exhibit stable photoconduction when illuminated with near‐IR light (wavelength &gt; 1200 nm) without any laborious ligand‐exchange steps. Flexible devices fabricated on polyethylene terephthalate (PET) substrates show excellent stability upon repeated bending. These hybrid materials are air‐stable and solution‐processable at low temperatures and thus promising for low‐cost flexible near‐IR photodetectors.</p> </abstract>