Bandgap Enhancement: Bandgap Control of the Oxygen‐Vacancy‐Induced Two‐Dimensional Electron Gas in SrTiO3 (Adv. Mater. Interfaces 6/2014). Issue 6 (September 2014)

• Record Type: Journal Article
• Authors: Liu, Z. Q.; Lu, W.; Zeng, S. W.; Deng, J. W.; Huang, Z.; Li, C. J.; Motapothula, M.; Lü, W. M.; Sun, L.; Han, K.; Zhong, J. Q.; Yang, P.; Bao, N. N.; Chen, W.; Chen, J. S.; Feng, Y. P.; Coey, J. M. D.; Venkatesan, T.; Ariando
• Is Part Of: Advanced materials interfaces. Volume 1:Issue 6(2014)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-09
• Subjects: Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201470040
• Languages: English
• ISSNs: 2196-7350

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="admi201470040-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>SrTiO₃ to modern oxide electronics is like silicon to the entire semiconductor industry. Z. Q. Liu, Ariando, and co‐workers show in article 1400155 that the bandgap of SrTiO₃ can be 20% larger in thin films than in the bulk. Such bandgap enhancement can change several properties. For example, it can vary the electronic and magnetic phases of SrTiO₃‐based interface systems. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1c5j0tb0" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>