Ultraviolet Irradiation‐Controlled Memory Effect in Graphene Field‐Effect Transistors. Issue 13 (11th February 2013)

• Record Type: Journal Article
• Authors: Meng, Jie; Wu, Han‐Chun; Chen, Jing‐Jing; Lin, Fang; Bie, Ya‐Qing; Shvets, Igor V.; Yu, Da‐Peng; Liao, Zhi‐Min
• Is Part Of: Small. Volume 9:Issue 13(2013:Jul.)
• Page Start: 2240
• Page End: 2244
• Publication Date: 2013-02-11
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201202947
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Control of graphene memory devices using photons</bold>, via control of the charge‐transfer process, is demonstrated by employing gate‐voltage pulses to program/erase the memory elements. The hysteresis in the conductance‐gate voltage‐dependence of graphene field‐effect transistors on a SiO₂ substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh191wf3js" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>