Electrical resistivity and its thermal coefficient of TiW alloy thin films prepared by two different sputtering systems. Issue 9 (29th April 2014)

• Record Type: Journal Article
• Authors: Sakurai, Yutaka; Takeda, Yuya; Ikeda, Shinji; Sakamoto, Yoshinori
• Is Part Of: Physica status solidi. Volume 11:Issue 9/10(2014)
• Page Start: 1423
• Page End: 1426
• Publication Date: 2014-04-29
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300621
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Electrical resistivity and its thermal coefficient (TCR) of TiW alloy thin films which were prepared by using two different sputtering systems have been investigated. System A is a DC‐magnetron sputtering system equipped with a single composite‐target that allows the contents controllable by an external field of solenoid as reported in previous papers (Sakurai and Takeda, Abstract of E‐MRS 2005 Fall Meeting [1] and Sakurai et al., Solid State Phenom. <bold>154</bold>, 175 (2009) [2]). The system A prepared specimens with the range of 21.6 to 36.6 at% of W‐contents. The TCR varies from minus to plus at 32 at% of W‐content. On the other hand, System B is a RF‐magnetron sputtering system equipped with multi‐targets and multi‐sputtering‐sources. The system B covered the whole binary composition ranges by controlling power ratio for two independent sputtering sources. The resistivity characteristics show a parabolic curve with the maximum value on Ti‐rich contents. The TCR decreases at the contents that shows the maximum resistivity, but the TCR is always plus and does not cross zero. Difference of the properties by using the two systems will be discussed. In the system A, the background is exhausted by an oil diffusion pump and the pressure is higher (lower vacuum degree) than the background in the system B with a turbo molecular pump. This suggests that zero TCR would be achieved by introducing the controlled impurities (O<sub>2</sub> or N<sub>2</sub>) into the binary alloy films. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</p> </abstract>