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P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor‐ and Acceptor‐like Density‐of‐States over Full‐Energy Range Sub‐Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One‐Shot Monochromatic Photonic Capacitance‐Voltage Characteristics. Issue 1 (1st July 2013)
Record Type:
Journal Article
Title:
P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor‐ and Acceptor‐like Density‐of‐States over Full‐Energy Range Sub‐Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One‐Shot Monochromatic Photonic Capacitance‐Voltage Characteristics. Issue 1 (1st July 2013)
Main Title:
P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor‐ and Acceptor‐like Density‐of‐States over Full‐Energy Range Sub‐Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One‐Shot Monochromatic Photonic Capacitance‐Voltage Characteristics
<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We report an extraction technique based on experimental data for intrinsic donor‐ and acceptor‐like subgap density‐of‐states (DOS) over the full‐energy range (E<sub>C</sub><E<E<sub>V</sub>) by using one‐shot monochromatic photonic capacitance‐voltage (MPCV) characteristics in n‐channel a‐IGZO TFTs.</p> </abstract>