62.2: Invited Paper: Bridged‐Grain Polycrystalline Silicon Thin‐Film Transistors. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Kwok, Hoi‐Sing; Zhou, Wei; Chen, Rongsheng; Zhao, Shuyun; Zhang, Meng; Wong, Man; Chen, Shuming; Chow, Thomas
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 863
• Page End: 866
• Publication Date: 2013-07-01
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06355.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>A new structure for thin‐film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short‐channel and multi‐junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on‐off current ratio and field‐effect mobility are improved.</p> </abstract>