46.3: Development of Source/Drain Electrodes for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors. Issue 1 (1st July 2013)
- Record Type:
- Journal Article
- Title:
- 46.3: Development of Source/Drain Electrodes for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors. Issue 1 (1st July 2013)
- Main Title:
- 46.3: Development of Source/Drain Electrodes for Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
- Authors:
- Chen, Yuting
Wu, Jie
Dong, Chengyuan
Shi, Junfei
Zhan, Runze
Chiang, Cheng‐Lung
Chen, Po‐Lin
Lai, Tzu‐Chieh - Abstract:
- <abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Tantalum etched by H<sub>2</sub>O<sub>2</sub> solution shows best performance to be the source/drain electrodes of inverted staggered amorphous Indium Gallium Zinc Oxide thin film transistors among the investigated five metal materials. In addition, the etching property is improved significantly by adding aqueous ammonia properly.</p> </abstract>
- Is Part Of:
- Digest of technical papers. Volume 44:Issue 1(2013)
- Journal:
- Digest of technical papers
- Issue:
- Volume 44:Issue 1(2013)
- Issue Display:
- Volume 44, Issue 1 (2013)
- Year:
- 2013
- Volume:
- 44
- Issue:
- 1
- Issue Sort Value:
- 2013-0044-0001-0000
- Page Start:
- 640
- Page End:
- 643
- Publication Date:
- 2013-07-01
- Subjects:
- Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/j.2168-0159.2013.tb06292.x ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3621.xml