Direct Observation of Doping Sites in Temperature‐Controlled, p‐Doped P3HT Thin Films by Conducting Atomic Force Microscopy. (24th July 2014)

• Record Type: Journal Article
• Authors: Duong, Duc T.; Phan, Hung; Hanifi, David; Jo, Pil Sung; Nguyen, Thuc‐Quyen; Salleo, Alberto
• Is Part Of: Advanced materials. Volume 26:Number 35(2014)
• Page Start: 6069
• Page End: 6073
• Publication Date: 2014-07-24
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402015
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402015-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The distribution of dopant sites</bold> in doped poly(3‐hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing‐incidence X‐ray diffraction, and conducting atomic force microscopy (c‐AFM). It is shown that dopant sites can be directly observed using c‐AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin‐cast films. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh1c43bs6v" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>