4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors. Issue 1 (1st July 2013)
- Record Type:
- Journal Article
- Title:
- 4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors. Issue 1 (1st July 2013)
- Main Title:
- 4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors
- Authors:
- Ye, Yan
Lim, Rodney
You, Harvey
Scheer, Evelyn
Gaur, Anshu
Hsu, Hao‐chien
Liu, Jian
Yim, Dong Kil
Hosokawa, Aki
White, John M. - Abstract:
- <abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed.</p> </abstract>
- Is Part Of:
- Digest of technical papers. Volume 44:Issue 1(2013)
- Journal:
- Digest of technical papers
- Issue:
- Volume 44:Issue 1(2013)
- Issue Display:
- Volume 44, Issue 1 (2013)
- Year:
- 2013
- Volume:
- 44
- Issue:
- 1
- Issue Sort Value:
- 2013-0044-0001-0000
- Page Start:
- 14
- Page End:
- 17
- Publication Date:
- 2013-07-01
- Subjects:
- Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/j.2168-0159.2013.tb06127.x ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3619.xml