Graphitic Silicon Nitride: A Metal‐Free Ferromagnet with Charge and Spin Current Rectification. Issue 13 (8th July 2014)

• Record Type: Journal Article
• Authors: Sen, Sabyasachi; Chakrabarti, Swapan
• Is Part Of: Chemphyschem. Volume 15:Issue 13(2014)
• Page Start: 2756
• Page End: 2761
• Publication Date: 2014-07-08
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.05
• DOI: 10.1002/cphc.201402265
• Languages: English
• ISSNs: 1439-4235

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>As a first example, herein we show that g‐Si₄N₃ is expected to act as a metal‐free ferromagnet featuring both charge and spin current rectification simultaneously. Such rectification is crucial for envisioning devices that contain both logic and memory functionality on a single chip. The spin coherent quantum‐transport calculations on g‐Si₄N₃ reveal that the chosen system is a unique molecular spin filter, the current‐voltage characteristics of which is asymmetric in nature, which can create a perfect background for synchronous charge and spin current rectification. To shed light on this highly unusual in‐silico observation, we have meticulously inspected the bias‐dependent modulation of the spin‐polarized eigenstates. The results indicate that, whereas only the localized 2p orbitals of the outer‐ring (OR) Si atoms participate in the transmission process in the positive bias, both OR Si and N atoms contribute in the reverse bias. Furthermore, we have evaluated the spin‐polarized electron‐transfer rate in the tunneling regime, and the results demonstrate that the transfer rates are unequal in the positive and negative bias range, leading to the possible realization of a simultaneous logic–memory device.</p> </abstract>