Purification and particle size control of β-SiC powder using thermocycling process. (August 2014)

• Record Type: Journal Article
• Authors: Jung, E. J.; Lee, Y. J.; Kim, S. R.; Kwon, W. T.; Choi, D. J.; Kim, Y.
• Is Part Of: Advances in applied ceramics. Volume 113:Number 6(2014)
• Page Start: 352
• Page End: 357
• Publication Date: 2014-08
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1179/1743676114Y.0000000171
• Languages: English
• ISSNs: 1743-6753

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow β-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 μm and a purity of 99·5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the β-SiC particles had diameters over 100 μm because of a vaporisation–recrystallisation process that accelerated the β-SiC particle growth. Moreover, the thermocycling process improved the purity of β-SiC by eliminating metallic impurities.</p> </abstract>