Growth and surface properties of epitaxial SnO2. Issue 9 (13th December 2013)

• Record Type: Journal Article
• Authors: Rachut, Karsten; Körber, Christoph; Brötz, Joachim; Klein, Andreas
• Is Part Of: Physica status solidi. Volume 211:Issue 9(2014:Sep.)
• Page Start: 1997
• Page End: 2004
• Publication Date: 2013-12-13
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201330367
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201330367-sec-0001" sec-type="section"> <p>The surface potentials of SnO₂ films grown epitaxially by magnetron sputtering on TiO₂ and Al₂O₃ substrates with (110), (001), (101), and (100) SnO₂ surface orientations are determined using <italic>in situ</italic> photoelectron spectroscopy. Epitaxial growth is verified using X‐ray diffraction and low energy electron diffraction. The emphasis lies on the determination of work functions and ionization potentials of epitaxial SnO₂ surfaces. SnO₂ films prepared under chemically reducing conditions exhibit work functions <italic>φ</italic> of 4.25–4.48 eV and ionization potentials <italic>I</italic>_P of 7.54–8.11 eV. It is furthermore demonstrated that a subsequent annealing in oxygen alters the surface dipole, visible through a large increase of ionization potential. This is due to a change of the surface termination from a reduced to a stoichiometric surface which exhibits Sn in the +IV oxidation state. The observed increase of <italic>I</italic>_P varies from 0.48 eV for the (110) SnO₂ surface to 1.05 eV for the (101) SnO₂ surface.</p> </sec> </abstract>