In situ XRD investigation of Cu2ZnSnSe4 thin film growth by thermal co‐evaporation. Issue 9 (9th January 2014)

• Record Type: Journal Article
• Authors: Kaune, Gunar; Hartnauer, Stefan; Scheer, Roland
• Is Part Of: Physica status solidi. Volume 211:Issue 9(2014:Sep.)
• Page Start: 1991
• Page End: 1996
• Publication Date: 2014-01-09
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201330340
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssa201330340-sec-0001" sec-type="section"> <p>The deposition of a Cu₂ZnSnSe₄ (CZTSe) thin film with a multi‐stage co‐evaporation process is investigated with time‐resolved <italic>in situ</italic> X‐ray diffraction (<italic>in situ</italic> XRD). For the experiment a novel setup intended for <italic>in situ</italic> analysis of thin film deposition processes was used. The <italic>in situ</italic> data confirm the former observation that CZTSe growth is delayed with deposition of only Cu_{2−<italic>x</italic>}Se and ZnSe in the initial process stage and provide new insight into the evolution of the appearing phases.</p> <p>In Zn‐rich deposition conditions, ZnSe deposited at the beginning may not be consumed by the growing CZTSe but remain as an unreacted layer at the interface to the Mo back contact. Cu_{2−<italic>x</italic>}Se growth starts with the formation of a Cu rich phase, which is reduced to a Cu poor phase in the process. Furthermore, our results show that <italic>in situ</italic> XRD at elevated temperatures is able to distinguish between ZnSe and CZTSe and that it can be used for the detection of ZnSe as secondary phase.</p> </sec> </abstract>