Cite
HARVARD Citation
Bosi, M. et al. (n.d.). Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE. Crystal research and technology. 49 (8), pp. 570-574. [Online].
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Bosi, M. et al. (n.d.). Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE. Crystal research and technology. 49 (8), pp. 570-574. [Online].