Heavily doped Si:P emitters of crystalline Si solar cells: recombination due to phosphorus precipitation. Issue 8 (2nd June 2014)

• Record Type: Journal Article
• Authors: Min, Byungsul; Wagner, Hannes; Dastgheib‐Shirazi, Amir; Kimmerle, Achim; Kurz, Heinrich; Altermatt, Pietro P.
• Is Part Of: Physica status solidi. Volume 8:Issue 8(2014:Aug.)
• Page Start: 680
• Page End: 684
• Publication Date: 2014-06-02
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409138
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" id="pssr201409138-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>The measured saturation current density <italic>J</italic>_0e of heavily phosphorus‐doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley–Read–Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies between measured and simulated <italic>J</italic>_0e values, observed persist‐ently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus‐diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced. (© 2014 WILEY‐VCH Verlag GmbH &amp;Co. KGaA, Weinheim)</p> </abstract>