Purification of ZnSe crystals from electrically active background impurities by ytterbium doping. Issue 8 (23rd June 2014)

• Record Type: Journal Article
• Authors: Radevici, Ivan; Sushkevich, Konstantin; Sirkeli, Vadim; Huhtinen, Hannu; Nedeoglo, Natalia; Nedeoglo, Dmitrii; Paturi, Petriina
• Is Part Of: Physica status solidi. Volume 251:Issue 8(2014:Aug.)
• Page Start: 1565
• Page End: 1569
• Publication Date: 2014-06-23
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451022
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451022-sec-0001" sec-type="section"> <p>Hall coefficient, electrical conductivity, and electron mobility are investigated for n‐ZnSe:Yb single crystals with high concentration of electrically active background impurities ((<inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghz8kvnpr" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451022:pssb201451022-math-0001" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>N</mml:mi><mml:mi mathvariant="normal">D</mml:mi></mml:msub><mml:mo>−</mml:mo><mml:msub><mml:mi>N</mml:mi><mml:mi mathvariant="normal">A</mml:mi></mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mo>></mml:mo><mml:mn>1.4</mml:mn><mml:mspace width="thinmathspace" /><mml:mo>×</mml:mo><mml:mspace width="thinmathspace" /><mml:msup><mml:mn>10</mml:mn><mml:mn>17</mml:mn></mml:msup></mml:math></alternatives></inline-formula>cm<inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghz8kvnrs" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451022:pssb201451022-math-0002" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mrow /><mml:mrow><mml:mo>−</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msup></mml:math></alternatives></inline-formula>) in the temperature range from 4.2 to 300 K. It is found that increasing concentration of Yb impurity in Zn + Yb melt from 0.03 to 4.00 at.% decreases the concentration of shallow <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghz8kvnk6" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451022:pssb201451022-math-0003" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>N</mml:mi><mml:mi mathvariant="normal">D</mml:mi></mml:msub></mml:math></alternatives></inline-formula> and deep <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghz8kvnmq" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451022:pssb201451022-math-0004" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>N</mml:mi><mml:mi mathvariant="normal">Deep</mml:mi></mml:msub></mml:math></alternatives></inline-formula> donors, as well as the concentration of compensating acceptors <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pghz8kvnxc" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451022:pssb201451022-math-0005" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>N</mml:mi><mml:mi mathvariant="normal">A</mml:mi></mml:msub></mml:math></alternatives></inline-formula> by nearly 2 orders of magnitude. A quantitative manifestation of purification of the ZnSe:Yb samples from non‐controlled background electrically active impurities and influence of this effect on changes in impurity band parameters and the temperature of electron gas degeneracy are shown. The most probable mechanism of the sample purification due to the formation of electrically neutral complexes based on ytterbium ions and background impurities of donor and acceptor types is discussed.</p> </sec> </abstract>