Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films. (22nd May 2014)

• Record Type: Journal Article
• Authors: Lee, Daesu; Jeon, Byung Chul; Yoon, Aram; Shin, Yeong Jae; Lee, Myang Hwan; Song, Tae Kwon; Bu, Sang Don; Kim, Miyoung; Chung, Jin‐Seok; Yoon, Jong‐Gul; Noh, Tae Won
• Is Part Of: Advanced materials. Volume 26:Number 29(2014)
• Page Start: 5005
• Page End: 5011
• Publication Date: 2014-05-22
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201400654
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201400654-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Flexoelectric control of defect formation and associated electronic function</bold> is demonstrated in ferroelectric BiFeO₃ thin films. An intriguing, so far never demonstrated, effect of internal electric field (<italic>E</italic>_int) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghxg0j34m" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>