Solid‐phase growth of Mg2Si by annealing in inert gas atmosphere. Issue 12 (11th November 2013)

• Record Type: Journal Article
• Authors: Ikehata, Takashi; Ando, Tatsuya; Yamamoto, Takuya; Takagi, Yuta; Sato, Naoyuki; Udono, Haruhiko; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1708
• Page End: 1711
• Publication Date: 2013-11-11
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300358
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Magnesium silicide (Mg₂Si) is an attractive semiconductor material for application to thermo‐electric conversion devices because it consists of non‐toxic and resource‐abundant elements. There were difficulties, however, in preparation of Mg₂Si thin films coming from large difference in thermodynamic properties between Mg and Si. In the present study, preparation of Mg₂Si thin films by solid‐phase synthesis; thermal annealing of metallic Mg on a Si substrate in argon gas atmosphere, is tested and optimum annealing conditions for the synthesis are explored. As a result, it is found that the optimum annealing temperature is 300‐350 °C and the argon gas pressure should be higher than 50 Pa. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>