Fabrication of n+‐BaSi2/p+‐Si tunnel junction on Si(001) surface for characterization of photoresponse properties of BaSi2epitaxial films. Issue 12 (25th November 2013)

• Record Type: Journal Article
• Authors: Koike, S.; Baba, M.; Nakamura, K.; Ajmal, K. M.; Du, W.; Toko, K.; Suemasu, T.; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1773
• Page End: 1776
• Publication Date: 2013-11-25
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300337
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We grew Sb doped n⁺‐BaSi₂ on p⁺‐Si(001) to form a tunnel junction using undoped BaSi₂ templates by reactive deposition epitaxy (RDE). When the RDE growth duration was 30 s, the current became the largest. In addition, a 250‐nm‐thick undoped BaSi₂ film was epitaxially grown on the tunnel junction for photoresponse measurement. Photocurrents, measured under the bias voltages between top and bottom electrodes, increased sharply at photon energies greater than 1.25 eV. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>