Conduction properties of β‐FeSi2 epitaxial films with low carrier density. Issue 12 (11th November 2013)

• Record Type: Journal Article
• Authors: Terai, Yoshikazu; Suzuki, Nozomu; Noda, Keiichi; Fujiwara, Yasufumi; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1696
• Page End: 1698
• Publication Date: 2013-11-11
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300342
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The electrical transport properties of β‐FeSi₂ epitaxial films grown on Si(001) or Si(111) substrates were investigated to clarify the growth‐orientation dependence of the electrical conduction mechanism in the β‐FeSi₂ epitaxial films with low electron density of ∼10¹⁶ cm^‐3. As temperature was decreased, the transition from band conduction to hopping conduction was observed in both the epitaxial films. The β‐FeSi₂ on Si(111) film showed the transition at higher temperature than the β‐FeSi₂ on Si(001). When the epitaxial films were annealed, the transition temperature shifted to lower temperature. The β‐FeSi₂ on Si(001) film annealed at 800ºC showed the largest electron mobility of 14800 cm²/V·s at 70 K. These results were understood by the conduction through the defect levels in the β‐FeSi₂ epitaxial films. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>