Epitaxial growth of Mg2Si films on strontium titanate single crystals. Issue 12 (11th November 2013)

• Record Type: Journal Article
• Authors: Akiyama, Kensuke; Katagiri, Atsuo; Ogawa, Shota; Matsushima, Masaaki; Funakubo, Hiroshi; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1688
• Page End: 1691
• Publication Date: 2013-11-11
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300332
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>(110)‐ and (111)‐oriented Mg₂Si films were grown at 325 °C on (100) and (110), and (111) SrTiO₃ substrates, respectively, by RF magnetron sputtering method. X‐ray pole figure measurement showed that (110)‐oriented Mg₂Si films on (100) and (110) SrTiO₃ substrates were in‐plane‐aligned epitaxially grown ones. (110)‐oriented epitaxial films on (100) SrTiO₃ substrates consisted of two types of varians in‐plane rotating at an angle of 90°, while epitaxial films on (110) SrTiO₃ substrates consisted of single type of domains. On the other hand, (111)‐oriented Mg₂Si films on (111) SrTiO₃ substrates were in‐plane‐random one‐axis oriented films. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>