Evaluation of diffusion coefficients of n‐type impurities in MBE‐grown BaSi2 epitaxial layers. Issue 12 (4th November 2013)

• Record Type: Journal Article
• Authors: Zhang, N.; Nakamura, K.; Baba, M.; Toko, K.; Suemasu, T.; Maeda, Yoshihito; Suzuki, Motofumi
• Is Part Of: Physica status solidi. Volume 10:Issue 12(2013:Dec.)
• Page Start: 1762
• Page End: 1764
• Publication Date: 2013-11-04
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300334
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Sb layers deposited on BaSi₂ epitaxial films on Si(111) substrates were annealed at different temperatures and durations to evaluate the diffusion coefficients of Sb using secondary ion mass spectrometry with Cs⁺ ions. The activation energies of lattice and grain boundary diffusions in BaSi₂ were found to be 0.64 eV and 1.20 eV, respectively. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>