Cite
HARVARD Citation
Lee, E. et al. (2014). Gate Capacitance‐Dependent Field‐Effect Mobility in Solution‐Processed Oxide Semiconductor Thin‐Film Transistors. Advanced functional materials. pp. 4689-4697. [Online].
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Lee, E. et al. (2014). Gate Capacitance‐Dependent Field‐Effect Mobility in Solution‐Processed Oxide Semiconductor Thin‐Film Transistors. Advanced functional materials. pp. 4689-4697. [Online].