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Mironov, O. et al. (n.d.). New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology. Physica status solidi. 11 (1), pp. 61-64. [Online].
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Mironov, O. et al. (n.d.). New RP‐CVD grown ultra‐high performance selectively B‐doped pure‐Ge 20 nm QWs on (100)Si as basis material for post‐Si CMOS technology. Physica status solidi. 11 (1), pp. 61-64. [Online].