Laser thermal anneal formation of atomically‐flat low‐resistive germanide contacts. Issue 1 (9th December 2013)

• Record Type: Journal Article
• Authors: Huet, K.; Shayesteh, M.; Toqué‐Tresonne, I.; Negru, R.; Daunt, C. L. M.; Kelly, N.; O'Connell, D.; Yu, R.; Djara, V.; Carolan, P.; Petkov, N.; Duffy, R.; Cristiano, Fuccio; Pichler, Peter; Tavernier, Clément; Windl, Wolfgang
• Is Part Of: Physica status solidi. Volume 11:Issue 1(2014:Jan.)
• Page Start: 169
• Page End: 173
• Publication Date: 2013-12-09
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300168
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this work, state‐of‐the‐art laser thermal annealing (LTA) is used to form germanide contacts on n‐doped Ge, and is compared to results generated by rapid thermal annealing (RTA). Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both techniques. For electrical characterization, specific contact resistivities ϱ_c are extracted. It is shown that LTA can produce a uniform contact with a remarkably smooth substrate interface, with ϱ_c 2‐3 orders of magnitude lower than the equivalent RTA case. A ϱ_c of 2.84×10^‐7 Ω.cm² is achieved for optimized LTA parameters. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>