Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates. Issue 2 (20th January 2014)

• Record Type: Journal Article
• Authors: Liu, Yuh‐Shiuan; Lochner, Zachary; Kao, Tsung‐Ting; Satter, Md. Mahbub; Li, Xiao‐Hang; Ryou, Jae‐Hyun; Shen, Shyh‐Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D.; Wei, Yong; Xie, Hongen; Fischer, Alec; Ponce, Fernando
• Is Part Of: Physica status solidi. Volume 11:Issue 2(2014:Feb.)
• Page Start: 258
• Page End: 260
• Publication Date: 2014-01-20
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300213
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6 × 2″ close‐coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm² and 297 kW/cm², respectively. Both laser bars showed transverse electric‐polarization‐dominated optical emission when operating above threshold. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>