N‐type in‐situ doping effect on vapour‐liquid‐solid silicon nanowire properties for gas sensing applications. Issue 2 (3rd February 2014)

• Record Type: Journal Article
• Authors: Pichon, L.; Rogel, R.; Jacques, E.; Salaun, A. C.
• Is Part Of: Physica status solidi. Volume 11:Issue 2(2014:Feb.)
• Page Start: 344
• Page End: 348
• Publication Date: 2014-02-03
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300206
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>N‐type <italic>in‐situ</italic> doped SiNWs based resistors are fabricated and used as gas (ammonia) sensors. SiNWs are prepared by vapour‐liquid‐solid method (VLS) using gold as catalyst. <italic>In‐situ</italic> doping level is adjusted by varying the phosphine to silane mole ratio. Because SiNWs can act as sensitive units specific design is developed to allow large sensing areas, following a process fabrication compatible with a mass production planar layout. SiNWs doping effect on ammonia detection is carried out under controlled ammonia/nitrogen mixture varying from 2 ppm to 700 ppm. Results highlight that the relative response, S_g=(I₀‐I_g)/I₀, where I₀ and I_g are the current values in vacuum and reactive ambient respectively, follows a linear behaviour. The relative sensitivity, (S=ΔS_g/Δ[NH₃]) decreases, whereas the sensitivity (SxI₀) increases with the increase of the VLS SiNWs doping level. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>