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HARVARD Citation
Hossain, T. et al. (n.d.). Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate. Physica status solidi. 10 (3), pp. 425-428. [Online].
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Hossain, T. et al. (n.d.). Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate. Physica status solidi. 10 (3), pp. 425-428. [Online].