Cite
HARVARD Citation
Hagedorn, S. et al. (n.d.). HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates. Physica status solidi. 10 (3), pp. 355-358. [Online].
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Hagedorn, S. et al. (n.d.). HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates. Physica status solidi. 10 (3), pp. 355-358. [Online].