Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE. Issue 3 (7th February 2013)

• Record Type: Journal Article
• Authors: Choi, Jung‐Hun; Shojiki, Kanako; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Toropov, Alexey; Ivanov, Sergey
• Is Part Of: Physica status solidi. Volume 10:Issue 3(2013:Mar.)
• Page Start: 417
• Page End: 420
• Publication Date: 2013-02-07
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200667
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>InGaN films on nitride‐sapphire substrates were grown by metalorganic vapor phase epitaxy. Reciprocal space mappings of X‐ray diffraction around the <tex-math notation="tex"><![CDATA[$(10\bar15)$]]></tex-math><inline-graphic xlink:href="ark:/27927/pgh6nd2hp1" mimetype="image" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /> asymmetric plane were used to measure the accurate indium composition and in‐plane strain of InGaN films. InGaN films with nitridation of sapphire substrates shows higher indium incorporation than without nitridation samples at low molar fraction ratio, TMIn/(TMIn+TEGa), of group‐III MO source. However, the high molar fraction ratio region shows relatively low indium composition of InGaN. Most of the InGaN on nitrided sapphire substrates showed narrow FWHM of 2<italic>θ</italic> –<italic>ω</italic> and X‐ray rocking curves and the surface flatness is improved, which indicates the improvement of crystal quality. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>