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HARVARD Citation
Boles, T. et al. (n.d.). >1200 V GaN‐on‐silicon Schottky diode. Physica status solidi. 10 (5), pp. 835-839. [Online].
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Boles, T. et al. (n.d.). >1200 V GaN‐on‐silicon Schottky diode. Physica status solidi. 10 (5), pp. 835-839. [Online].