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HARVARD Citation
Shams, M. et al. (n.d.). An accurate interband tunneling model for InAs/GaSb heterostructure devices. Physica status solidi. 10 (5), pp. 740-743. [Online].
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Shams, M. et al. (n.d.). An accurate interband tunneling model for InAs/GaSb heterostructure devices. Physica status solidi. 10 (5), pp. 740-743. [Online].