Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers. Issue 5 (29th January 2013)

• Record Type: Journal Article
• Authors: Banerjee, Animesh; Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Bhattacharya, Pallab; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 816
• Page End: 819
• Publication Date: 2013-01-29
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200577
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Blue‐emitting and green‐emitting laser heterostructures were grown by molecular beam epitaxy, incorporating InGaN/GaN quantum dots as the active medium, with a measured quantum efficiency of 60% on n‐GaN bulk substrates. These quantum dots exhibit no S‐shape in the photoluminescence peak wavelength as a function of temperature, as typically found in comparable quantum well devices. The lasers were characterized by a threshold current density, J_th, of 930 A/cm² under pulsed bias, with a differential efficiency of 13.9%, and a wall plug (power conversion) efficiency of 0.4% at 1050 A/cm². Green‐emitting quantum dot lasers have J_th = 935 A/cm². The lasers were also characterized by their modal properties through near field imaging (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>