AlGaAs anode heterojunction PIN diodes. Issue 5 (27th March 2013)

• Record Type: Journal Article
• Authors: Boles, T.; Brogle, J.; Hoag, D.; Carlson, D.; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 786
• Page End: 789
• Publication Date: 2013-03-27
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200612
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effectively reduces the series resistance within the I‐region of a PIN diode. Simulations of both single and double heterojunction PIN diodes predict a significant improvement in the return loss and insertion loss as compared to an equivalent GaAs PIN structure. In particular, the single heterojunction PIN diode, when simulated at a bias of 10 mA, indicates a factor of two reduction in high frequency insertion loss. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>