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HARVARD Citation
Aziz, M. et al. (n.d.). Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE. Physica status solidi. 10 (1), pp. 101-104. [Online].
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Aziz, M. et al. (n.d.). Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual‐band (UV/IR) detectors grown by MBE. Physica status solidi. 10 (1), pp. 101-104. [Online].