Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability. Issue 2 (4th January 2013)

• Record Type: Journal Article
• Authors: Nguyen, D. D.; Kouhestani, C.; Kambour, K. E.; Hjalmarson, H. P.; Devine, R. A. B.; Stanek, Christopher R.; Nikl, Martin; Kovács, László; Greulich‐Weber, Siegmund
• Is Part Of: Physica status solidi. Volume 10:Issue 2(2013:Feb.)
• Page Start: 259
• Page End: 262
• Publication Date: 2013-01-04
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200412
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We have studied defect charging and discharging resulting from negative bias temperature instability in nitrided SiO₂ gate insulator field effect transistors. Using pseudo‐DC and pulsed stressing methods, we are able to extract at least three individual components associated with a) interface states at the semiconductor/insulator boundary, b) dynamically recoverable positive charging in the "bulk" of the insulator, and c) positive charge in the insulator which can be "eliminated" by application of a positive electric field across the insulator. It is argued that the charge variation in c) in fact arises via a charge neutralization process involving electron capture at switching traps and that this process can be simply reversed using a small negative field. The important role played by neutral oxygen vacancies (O₃≡Si‐Si≡O₃) and/or their variants involving partial N substitutions is emphasized. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>