Ultrahigh Photoresponse of Few‐Layer TiS3 Nanoribbon Transistors. Issue 7 (8th April 2014)

• Record Type: Journal Article
• Authors: Island, Joshua O.; Buscema, Michele; Barawi, Mariam; Clamagirand, José M.; Ares, José R.; Sánchez, Carlos; Ferrer, Isabel J.; Steele, Gary A.; van der Zant, Herre S. J.; Castellanos‐Gomez, Andres
• Is Part Of: Advanced optical materials. Volume 2:Issue 7(2014:Jul.)
• Page Start: 641
• Page End: 645
• Publication Date: 2014-04-08
• Subjects: Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201400043
• Languages: English
• ISSNs: 2195-1071

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adom201400043-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>TiS₃ nanoribbons with thickness down to 15 nm</bold> are isolated by viscoelastic mechanical exfoliation. Field‐effect transistors are fabricated and their electrical characteristics are studied in the dark state and upon illumination. An ultrahigh photoresponse up to 3000 A/W, a bandgap of 1 eV, and response times of about 4 ms are found making TiS₃ a state‐of‐the‐art material in photodetection. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghsf0kjjs" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>