Transparent, Low‐Power Pressure Sensor Matrix Based on Coplanar‐Gate Graphene Transistors. (20th May 2014)

• Record Type: Journal Article
• Authors: Sun, Qijun; Kim, Do Hwan; Park, Sang Sik; Lee, Nae Yoon; Zhang, Yu; Lee, Jung Heon; Cho, Kilwon; Cho, Jeong Ho
• Is Part Of: Advanced materials. Volume 26:Number 27(2014)
• Page Start: 4735
• Page End: 4740
• Publication Date: 2014-05-20
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201400918
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201400918-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A novel device architecture</bold> for preparing a transparent and low‐voltage graphene pressure‐sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa⁻¹, and excellent mechanical durability over 2500 cycles. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghrq65trj" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>