Aerosol‐Assisted Chemical Vapour Deposition of Transparent Zinc Gallate Films. Issue 7 (30th April 2014)

• Record Type: Journal Article
• Authors: Knapp, Caroline E.; Manzi, Joe A.; Kafizas, Andreas; Parkin, Ivan P.; Carmalt, Claire J.
• Is Part Of: ChemPlusChem. Volume 79:Issue 7(2014:Jul.)
• Page Start: 1024
• Page End: 1029
• Publication Date: 2014-04-30
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1002/cplu.201402037
• Languages: English
• ISSNs: 2192-6506

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Aerosol‐assisted chemical vapour deposition (AACVD) reactions of GaMe₃, ZnEt₂ and the donor‐functionalised alcohol HOCH₂CH₂OMe (6 equiv.) in toluene resulted in the deposition of amorphous transparent zinc gallate (ZnGa₂O₄) films at a range of temperatures (350–550 °C). The zinc–gallium oxide films were analyzed by scanning electron microscopy, X‐ray photoelectron spectroscopy (XPS), energy‐dispersive X‐ray analysis, glancing‐angle X‐ray powder diffraction (XRD) and optical studies. The optimum growth temperature was found to be 450 °C, which produced transparent films with excellent coverage of the substrate. XPS confirmed the presence of zinc, gallium and oxygen in the films. Annealing these films at 1000 °C resulted in crystalline films and glancing‐angle powder XRD showed that a zinc gallate spinel framework with a lattice parameter of <italic>a</italic>=8.336(5) Å was adopted.</p> </abstract>