Fundamental Limitations for Electroluminescence in Organic Dual‐Gate Field‐Effect Transistors. (25th March 2014)

• Record Type: Journal Article
• Authors: Roelofs, W. S. Christian; Spijkman, Mark‐Jan; Mathijssen, Simon G. J.; Janssen, René A. J.; de Leeuw, Dago M.; Kemerink, Martijn
• Is Part Of: Advanced materials. Volume 26:Number 26(2014)
• Page Start: 4450
• Page End: 4455
• Publication Date: 2014-03-25
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201305215
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201305215-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A dual‐gate organic field‐effect transistor</bold> is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghqcc904c" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>