High‐Performance Solution‐Processable N‐Shaped Organic Semiconducting Materials with Stabilized Crystal Phase. (8th May 2014)

• Record Type: Journal Article
• Authors: Mitsui, Chikahiko; Okamoto, Toshihiro; Yamagishi, Masakazu; Tsurumi, Junto; Yoshimoto, Kazumi; Nakahara, Katsumasa; Soeda, Junshi; Hirose, Yuri; Sato, Hiroyasu; Yamano, Akihito; Uemura, Takafumi; Takeya, Jun
• Is Part Of: Advanced materials. Volume 26:Number 26(2014)
• Page Start: 4546
• Page End: 4551
• Publication Date: 2014-05-08
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201400289
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201400289-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>N‐shaped organic semiconductors</bold> are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for <italic>p</italic>‐type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm² V^–1 s^–1 (12.1 cm² V^–1 s^–1 on average) with small threshold voltages in solution‐crystallized field‐effect transistors. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghqcc8wgn" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>