Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors. Issue 7 (28th May 2014)

• Record Type: Journal Article
• Authors: Grivickas, Vytautas; Gulbinas, Karolis; Gavryushin, Vladimir; Bikbajevas, Vitalijus; Korolik, Olga V.; Mazanik, Alexander V.; Fedotov, Alexander K.
• Is Part Of: Physica status solidi. Volume 8:Issue 7(2014:Jul.)
• Page Start: 639
• Page End: 642
• Publication Date: 2014-05-28
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409148
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We reveal the intrinsic band‐to‐band photoluminescence (PL) in Tl‐based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for <bold><italic>k</italic></bold> ⊥ <bold><italic>c</italic></bold>, where <bold><italic>c</italic></bold> is the layers stacking axis, and is dependent on polarization. In TlGaSe₂, the band edge absorption spectra were determined at different excitation geometry by using techniques of depth‐resolved free‐carrier absorption (FCA) and photoacoustic response (PAR). A strong absorption enhancement is detected in a large spectral area in the near‐surface region lateral to <italic>ab</italic> plane. The band‐to‐band absorption enhancement is the most probable cause for high PL intensity. The near‐surface behavior, different from the bulk, might implement useful photonic functionality at room temperature (RT). (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>