High‐Performance Flexible Bottom‐Gate Organic Field‐Effect Transistors with Gravure Printed Thin Organic Dielectric. Issue 3 (28th February 2014)

• Record Type: Journal Article
• Authors: Vaklev, Nikolay L.; Müller, Robert; Muir, Beinn V. O.; James, David T.; Pretot, Roger; van der Schaaf, Paul; Genoe, Jan; Kim, Ji‐Seon; Steinke, Joachim H. G.; Campbell, Alasdair J.
• Is Part Of: Advanced materials interfaces. Volume 1:Issue 3(2014)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2014-02-28
• Subjects: Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201300123
• Languages: English
• ISSNs: 2196-7350

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="admi201300123-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Gravure‐printed dielectric films</bold> are presented, which are 100‐nm thick, have about 1‐nm root mean‐square surface roughness and show high electric field strength (&gt;300 MV/m). This dielectric is combined with an ultra‐thin—less than 10 nm—layer of poly(α‐methylstyrene) on top which gives state‐of‐the‐art field‐effect mobility in transistors with thermally‐evaporated pentacene (0.6 cm²/Vs) and zone‐cast TIPS‐pentacene (0.3 cm²/Vs). <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghmfnt7zx" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>