Transparent Electronics: Photo‐Insensitive Amorphous Oxide Thin‐Film Transistor Integrated with a Plasmonic Filter for Transparent Electronics (Adv. Funct. Mater. 23/2014). (June 2014)

• Record Type: Journal Article
• Authors: Chang, Seongpil; Do, Yun Seon; Kim, Jong‐Woo; Hwang, Bo Yeon; Choi, Jinnil; Choi, Byung‐Hyun; Lee, Yun‐Hi; Choi, Kyung Cheol; Ju, Byeong‐Kwon
• Is Part Of: Advanced functional materials. Volume 24:Number 23(2014)
• Page Start: 3481
• Page End: 3481
• Publication Date: 2014-06
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201470151
• Languages: English
• ISSNs: 1616-301X

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adfm201470151-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Transparent electronic devices demonstrated by K. C. Choi, B.‐K. Ju, and co‐workers show as invisible to the eyes. In order to achieve stable device operatiom, the negative‐bias illumination stressinduced instability must be improved. To achieving this, plasmonic filters engraved by laser interference lithography are integrated with amorphous oxide‐semiconductor thin film transistors. The cut‐off wavelength of plasmonic filters can be designed by controlling the periodic nanopatterns, and cutting off the light, which can affect amorphous oxide semiconductors, thereby realizing the photostable transparent electronic devices. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghmfk4wp5" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>