Graphene Versus Ohmic Metal as Source‐Drain Electrode for MoS2 Nanosheet Transistor Channel. Issue 12 (2nd March 2014)

• Record Type: Journal Article
• Authors: Lee, Young Tack; Choi, Kyunghee; Lee, Hee Sung; Min, Sung‐Wook; Jeon, Pyo Jin; Hwang, Do Kyung; Choi, Hyoung Joon; Im, Seongil
• Is Part Of: Small. Volume 10:Issue 12(2014:Jun.)
• Page Start: 2356
• Page End: 2361
• Publication Date: 2014-03-02
• Subjects: Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201303908
• Languages: English
• ISSNs: 1613-6810

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="smll201303908-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Two MoS₂ field‐effect transistors</bold> are compared using graphene and Au/Ti source‐drain contacts in respects of their Ohmic and OFF behavior on an identical MoS₂ nanosheet. As a result, graphene‐contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric‐field‐induced work function tuning of exfoliated graphene. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghmhx0whp" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>